首页> 外文会议>Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for >Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing
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Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing

机译:超薄OTFT的量子效应及其原子氢退火制造工艺

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We had fabricated the pentacene organic thin-film transistor (OTFT) with very thin film thickness and investigated the electrical characteristics. When the film thickness decreased, the on current of OTFT increased. It is considered that the quantum level is formed in the triangle potential. The mobility of OTFT is improved by using quantum effect. In order to fabricate uniformly ultrathin OTFT without pinhole, the size of pentacene island must be smaller. We tried to fabricate pentacene island using atomic hydrogen annealing (AHA). It is found that pentacene and resist can be etched by AHA without damage. It is expected that this method is a promising technique for fabrication of ultrathin OTFT with small island.
机译:我们制造了厚度非常薄的并五苯有机薄膜晶体管(OTFT),并研究了其电气特性。当膜厚度减小时,OTFT的导通电流增加。认为在三角势中形成了量子能级。通过利用量子效应来提高OTFT的迁移率。为了制造没有针孔的均匀超薄OTFT,并五苯岛的尺寸必须更小。我们尝试使用原子氢退火(AHA)制造并五苯岛。发现并五苯和抗蚀剂可以通过AHA蚀刻而没有损坏。预期该方法是用于制造具有小岛的超薄OTFT的有前途的技术。

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