Photoluminescence study on recrystallization of ultra-shallow junction towards in-line measurements

摘要

Defect formation and annihilation in ultra-shallow junction (USJ) before and after rapid thermal annealing (RTA) are characterized by multiwavelength-excited photoluminescence (PL) technique with probing depths of excitation light in a range between 1.5 and 45 mm clearly identifies defects formed in the deep region beneath the shallow implanted layers. Compared with the results obtained by deep-level transient spectroscopy (DLTS), PL measurements at room temperature enable us to characterized defects of USJ layers with density in the density in the order of 10¹² cm⁻³ or less, nondestructively on an in-line basis.