Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence

摘要

Abstract: On the example of the PbTe and Pb$-077$/Sn$-023$/Te on BaF$- 2$/ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF$-2$/ substrates. !6