Laser-Induced Selective Deposition of Pt on p-Silicon Wafers

摘要

A process is described to selectively deposit Pt films from platingrnsolution on p-silicon wafers. The p-silicon was locally irradiated using arnNd:YAG laser. At the irradiated area, the Pt film was formed. In this report,rnPt films were obtained from three kinds of Pt plating solutions containingrndifferent legends. The effect of laser beam irradiation was studied. Thernquality of film was tested by SEMedXPSXP AES & QT2 techniques. The Ptrndeposits show ohmic contact with p-type silicon .On a certain condition, Ptrnwill be deposited on ceramics. The local heating of solution-electroderninterface under illumination has been attributed to the deposition process.