MONTE CARLO SIMULATION ON PROPERTIES OF FLUORESCENT DISPLAYS USING GaN UV LEDS

摘要

Developments of short-wavelength light-emitting-diodes (LEDs) and/or laser diodes (LDs) based on gallium nitride (GaN) thin films have been extremely active after the breakthrough on the growth technique of GaN thin films. We have shown possibilities for realizing full-color fluorescent display devices as an application of GaN UV LEDs in which phosphor films of three primary colors are respectively excited by UV light emitted from the LEDs. If a GaN micro UV LED array could be fabricated on one large substrate, flat panel fluorescent displays having high resolution, high brightness, wide view angle, low driving voltage and long life time would be achieved by contacting the RGB phosphor films to the LED array as schematically shown in Fig. 1. In this work, emission properties of the fluorescent display devices are investigated by the Monte Carlo simulation, and their structures which realize high resolution and high brightness are discussed.