EFFECTIVE MANAGEMENT OF PROCESS EXHAUST FROM LOW-K CVD PROCESSES

摘要

Because the development of low k films by CVD processes utilizes novel precursors, careful consideration must be given to abatement of the exhaust products from these processes. Incineration is rapidly gaining acceptance in this role, although simple burning techniques often fall short of meeting abatement requirements. Low k CVD precursors are difficult to burn cleanly and require adequate O_2 for complete combustion. Also, using NF_3 for in situ chamber cleans generates F_2 and HF, which amplify abatement requirements. A study was done to determine the abatement requirements of both the deposition and the chamber clean steps of the low k CVD process. An optimized point of use (POU) combustor / scrubber device showed > 99% destruction removal efficiency (DRE) of all precursors tested using either compressed dry air (CDA) or O_2 as appropriate. The device was also optimized for quantitative removal of NF_3 and F_2 from the chamber clean.