MODELING PARTICLE NUCLEATION DURING THERMAL CVD OF SILICON FROM SILANE USING KINETIC MONTE CARLO SIMULATION

摘要

Kinetic Monte Carlo simulations are being used to model the homogeneous chemical nucleation of particles during thermal CVD of silicon from silane. The evolution of an individual silicon-hydrogen cluster is followed as it isomerizes and, eventually, disintegrates or grows. The methodology for these simulations is described. Preliminary results on cluster free energies, cluster growth probabilities, and effective rate constants that are averaged over an ensemble of cluster isomers are presented.