首页> 外文会议>Fifteenth International Symposium on Chemical Vapor Deposition, May 14-18, 2000, Toronto, Ontario >NOVEL MOCVD PROCESS FOR THE LOW TEMPERATURE DEPOSITION OF THE CHROMIUM NITRIDE PHASES
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NOVEL MOCVD PROCESS FOR THE LOW TEMPERATURE DEPOSITION OF THE CHROMIUM NITRIDE PHASES

机译:低温氮化铬相沉积的新型MOCVD工艺

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An MOCVD route for the low temperature deposition of each individual phase of the Cr-N system has been investigated. The chromium nitride coatings were deposited under low pressure on steel and silicon substrates at temperature as low as 723 K using bis(benzene)chromium as Cr source under NH_3 ambient and in presence of C_6Cl_6 vapor. The carbon contamination of the layers is very low and limited to a few atomic percent. The nature of the deposited phases depends on the NH_3:Cr(C_6H)6)_2 mole fraction ratio. Single-phase CrN and dual-phase CrN+Cr_2N coatings have been deposited by this triple-source process. Preliminary mechanical properties of the layers are reported and discussed in relation with their composition and microstructure.
机译:已经研究了用于Cr-N系统各个相的低温沉积的MOCVD路线。在NH_3环境下,在C_6Cl_6蒸气存在下,使用双(苯)铬作为Cr源,在低至723 K的温度下,在钢和硅衬底上低压沉积氮化铬涂层。层的碳污染非常低,并且限制在几个原子百分比。沉积相的性质取决于NH_3:Cr(C_6H)6)_2摩尔分数比。通过这种三源工艺已经沉积了单相CrN和双相CrN + Cr_2N涂层。报道了层的初步机械性能,并讨论了它们的组成和微观结构。

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