Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

摘要

We report on the growth of Ba(Ti_(1-x)Zr_x)O_3 thin films on Pt(111) / TiO_2 / SiO_2/ Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet~R vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti_(0.63)Zr_(0.37))O_3 films were successfully grown on platinum coated silicon substrates at temperatures around 630℃.