首页> 外文会议>European Solid-State Device Research Conference;ESSDERC; 20070911-13;20070911-13; Muenchen(DE);Muenchen(DE) >Electro-Thermal Model of a High-Voltage IGBT Module for Realistic Simulation of Power Converters
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Electro-Thermal Model of a High-Voltage IGBT Module for Realistic Simulation of Power Converters

机译:高压IGBT模块的电热模型,用于仿真功率转换器

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摘要

This paper proposes the compact model development of a 6.5kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-Diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.
机译:本文提出了用于电路仿真环境的6.5kV场截止IGBT模块的紧凑模型开发。该模型考虑了IGBT-二极管对的实际连接:半导体物理学的描述与自热效应耦合;还考虑了与封装和布局相关的电磁现象。一系列仿真示例证明了所提出解决方案的有效性。

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