MEMS IC concept for Reconfigurable Low Noise Amplifier

摘要

This paper investigates the MEMS IC concept for reconfigurable Low noise amplifier. A dual band demonstrator has been chosen and obtained through a very compact architecture that uses a MEMS network and a SiGe LNA. The system features gain larger than 11 dB and noise figure lower than 2.5dB. The concept has been validated on a first prototype, where a bond wire process has been used. Next generation will use an hybrid above IC method.