Hydrogen-saturated SiC-surfaces: Model Systems for Studies of Passivation, Reconstruction, and Interface Formation

机译：氢饱和的SiC表面：用于钝化，重建和界面形成的模型系统

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Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000℃. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.

机译：SiC表面的氢化是通过在1000℃左右的超纯氢中进行退火而进行的。已使用多种技术对氢化表面进行了研究，并显示出优异的性能，这些性能已根据先前对Si和SiC表面和界面的研究进行了讨论。

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《European Conference on Silicon Carbide and Related Materials(ECSCRM 2004); 20040831-0904; Bologna(IT)》|2004年|P.535-540|共6页
会议地点 Bologna(IT)
作者
Th. Seyller;
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作者单位

Institut fuer Technische Physik II, Universitaet Erlangen-Nuernberg Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类材料;第Ⅳ族非金属元素（碳和硅）及其化合物;
关键词
hydrogen; reconstruction; surface; interface; photoelectron spectroscopy; synchrotron radiation; low-energy electron diffraction; infrared absorption;

机译：氢;重建;表面;界面;光电子能谱;同步辐射;低能电子衍射;红外吸收;

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Hydrogen-saturated SiC-surfaces: Model Systems for Studies of Passivation, Reconstruction, and Interface Formation

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