A circuit model of double hetrostructure semiconductor laser diode is developed from the temperature dependent multimode rate equations. The temperature dependent gain coefficient and threshold current density are included in the circuit model. The package aprasitics and termainal impedance are also incorporated. The circuit model is simulated using circuit simulation package PSICE> The simulation results obtained indicate the temperature effect on turn on delay and optical pulse amplitude. This model is simple in approach and is useful to evaluate the modulation dynamics of semiconductor laser at higher temperatures.
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