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Simulation analysis of a miniaturized electron optics of the Massively Parallel Electron Beam Direct-Write (MPEBDW) for Multi-column system

机译:用于多柱系统的大规模平行电子束直接写入(MPEBDW)小型电子光学系统的仿真分析

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massively parallel; crossover; coulomb repulsion; spherical aberration; field curvature%In this study, a simulation analysis of a miniaturized electron optics for the Multi-Column Massively Parallel Electron Beam Writing system is demonstrated. Analytical evaluation of space charge effect with prototype Massively Parallel Electron Beam Writing (MPEBW) system showed 2.86 ran blur in radius occurs on each beam with a convergence half angle of 3 mrad. The angle of each beam was increased to 10 mrad to reduce the space charge effect, the coulomb blur amount can be kept to less than 1 nm in radius. However, there was limitation to increase the angle due to a spherical aberration. Since the beam current density from the electron emitter array in the prototype MPEBW system was 100 μA/cm~2 and the total beam current was 1μA with 100×100 array of 10μm square emitter, the influence of coulomb blur was small. By contrast, considerably increasing the number of beams and the beam current are planned in near future in MPEBW. The coulomb blur and other aberrations will not be controlled by merely adjusting the beam convergence angle. In order to increase total beam current, miniaturized electron optics have been designed for Multi-beam+Multi-column system. Reduction lens in the designed miniaturized electron optics with crossover free to reduce the influence of coulomb repulsion with narrow convergence half angle. Unlike conventional methods, the electron beams as principal rays do not intersect at one point, so even if the beam becomes extremely narrow, the coulomb repulsion effect does not increase at the crossover area. The reduction of the entire size of parallel beams in the designed electron optics was confirmed by simulation software. The simulation results showed that least confusion disk of 6.5 nm size was obtained at the beam convergence half angles of 3 mrad corresponding to the incident beam of ±0.1 mrad divergence angle. It showed that the miniaturized electron optics was suitable for 10 nm order EB writing. The crossover free electron optics of the miniaturized electron optics is possible due to dispersing the intersection points of the principal rays by a combination of a concentric electron optics and a tapered lens electrode of the reduction lens.
机译:大规模平行交叉库仑排斥球差场曲率%在本研究中,对多列大规模并行电子束写入系统的小型化电子光学器件的仿真分析进行了演示。使用原型大规模并行电子束写入(MPEBW)系统对空间电荷效应的分析评估显示,在具有3 mrad会聚半角的每个束上,半径发生2.86 RAN的模糊。每个光束的角度增加到10 mrad以减小空间电荷效应,库仑模糊量可以保持在半径小于1 nm的范围内。然而,由于球面像差而存在增加角度的限制。由于原型MPEBW系统中来自电子发射器阵列的电子束电流密度为100μA/ cm〜2,并且对于10μm正方形发射器的100×100阵列,总电子束电流为1μA,因此库仑模糊的影响很小。相反,在不久的将来,计划在MPEBW中大大增加束的数量和束电流。仅通过调整光束会聚角就不会控制库仑模糊和其他像差。为了增加总束流,已经为多束+多柱系统设计了小型化的电子光学器件。设计的小型化电子光学器件中的变倍镜可自由交叉,以减小会聚半角狭窄的库仑斥力的影响。与传统方法不同,作为主射线的电子束不会在一个点处相交,因此,即使电子束变得非常狭窄,库伦排斥效应在交叉区域也不会增加。仿真软件证实了设计的电子光学系统中平行光束整体尺寸的减小。仿真结果表明,在3 mrad的光束会聚半角(对应于±0.1 mrad发散角的入射光束)下,可获得最小的6.5 nm混淆盘。结果表明,微型电子光学器件适合10 nm级EB写入。由于通过同心电子光学器件和变倍透镜的锥形透镜电极的组合来分散主光线的交点,因此小型化电子光学器件中的无交叉电子光学器件成为可能。

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