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EUV Interferometry of the 0.3 NA MET Optic

机译:0.3 NA MET光学的EUV干涉测量

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A new generation of 0.3 numerical aperture prototype EUV optical systems is now being produced to provide an opportunity for early learning at 20-nm feature size. Achieving diffraction limited performance from these two-mirror, annular projection optics poses a challenge for every aspect of the fabrication process, including final alignment and interfero-metric qualification. A new phase-shifting point diffraction interferometer will be used at Lawrence Berkeley National Laboratory for the measurement and alignment of the MET optic at EUV wavelengths. Using the previous generation of prototype EUV optical systems developed for lithography research, with numerical apertures up to 0.1, EUV interferometers have demonstrated RMS accuracy levels in the 40-70 pm range. Relative to the previous generation of prototype EUV optics, the threefold increase to 0.3 NA in the image-side numerical aperture presents several challenges for the extension of ultra-high-accuracy.
机译:现在正在生产新一代0.3数值孔径原型EUV光学系统,以提供20纳米特征尺寸的早期学习机会。从这些双镜面环形投影光学器件获得衍射受限的性能对制造工艺的各个方面都构成了挑战,包括最终对准和干涉测量资格。劳伦斯伯克利国家实验室将使用一种新的相移点衍射干涉仪来测量和对准EUV波长处的MET光学器件。使用为光刻研究开发的上一代原型EUV光学系统,其数值孔径高达0.1,EUV干涉仪的RMS精度水平在40-70 pm范围内。相对于上一代原型EUV光学器件,像侧数值孔径的三倍增加至0.3 NA带来了超高精度扩展方面的若干挑战。

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