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Photopatternable Silicone Compositions for Electronics Packaging Applications

机译:电子封装应用的可光图案化的有机硅组合物

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Development of the next generation of electronics devices is creating a need for new specialized materials, application and integration processes for building reliable yet sophisticated packaging architectures. Key physical property attributes of these new materials include flexibility, low stress, and high thermal stability. To meet these needs Dow Corning is developing a family of spin coatable photopatternable silicone materials, application processes, as well as integration know-how to assist device manufactures in building the next generation of devices enabled by silicone based material technologies. These new materials can be easily coated onto electronics substrates and have been patterned using a commercially available stepper from Ultratech Inc. Films with a thickness ranging from 6 to 50 μm have been demonstrated with patterned features resolved to 20 μm dimensions in 20 μm thick films. The etched regions provide a shallow sidewall slope and smooth curved surfaces that facilitate direct on silicone metallization. After patterning the films can be cured at low temperatures (150 to 250℃) to provide modulus values in the range of 150 to 500 MPa. These materials are inherently hydrophobic and are based on a cure system that is acid free and delivers highly thermally stable crosslinks without the need to outgas photocatalysts or ancillary chemicals. As a result, the films show very little shrinkage during thermal cure (~2%), do not require extended high temperature processing, and provide a very low stress (<5 MPa). Yet in spite of their low temperature cure capability these materials show excellent thermal stability and mechanical integrity when exposed to high temperatures.
机译:下一代电子设备的开发正在需要新的专用材料,应用程序和集成过程,以构建可靠而复杂的包装体系结构。这些新材料的关键物理属性包括柔韧性,低应力和​​高热稳定性。为了满足这些需求,道康宁公司正在开发一系列可旋涂的可光图案化的有机硅材料,应用工艺以及集成技术,以帮助设备制造商构建基于有机硅材料技术的下一代设备。这些新材料可以轻松地涂覆在电子基板上,并已使用Ultratech Inc.的市售步进器进行了构图。膜厚6至50μm的膜具有20 pm厚的膜中分辨率高达20μm的构图特征。蚀刻的区域提供了浅的侧壁斜率和平滑的曲面,有利于直接在硅金属上进行金属化。构图后,可以在低温(150至250℃)下固化膜,以提供150至500 MPa范围内的模量值。这些材料本质上是疏水性的,基于无酸的固化体系,可提供高度热稳定的交联,而无需除掉光催化剂或辅助化学品。结果,该膜在热固化过程中几乎没有收缩(〜2%),不需要长时间的高温处理,并且应力非常小(<5 MPa)。尽管具有低温固化能力,但这些材料在暴露于高温时仍具有出色的热稳定性和机械完整性。

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