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A study of stacking limit and scaling in 3D ICs: an interconnect perspective

机译:3D IC的堆叠极限和缩放比例研究:互连角度

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An examination of large-scale stacking of 3D integrated ICs from a power-supply and thermal reliability perspective is presented. Noise characteristics and scaling issues related to through-silicon-via (TSV) size and pitch as well as other power-supply topology characteristics are included. Thermal simulations are carried out assuming the use of micro-fluidic heatsinks to provide cooling to systems with power dissipation of up to 525 watts and 46 integrated silicon tiers. Results indicate that these large systems are feasible given sufficient planning. Power-delivery-bump pitch is identified as the most important factor influencing IR-drop and dynamic noise. Contact resistance also may become a major limiting factor.
机译:提出了从电源和热可靠性的角度对3D集成IC进行大规模堆叠的研究。包括与硅通孔(TSV)的尺寸和间距以及其他电源拓扑特性有关的噪声特性和缩放问题。假设使用微流体散热器来进行散热,以为功耗高达525瓦和46个集成硅层的系统提供散热。结果表明,如果有足够的计划,这些大型系统是可行的。功率传递节距被确定为是影响IR下降和动态噪声的最重要因素。接触电阻也可能成为主要的限制因素。

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