FABRICATION OF HIGH TEMPERATURE PRESSURE SENSOR WITH DOUBLE SOI STRUCTURE BY SDB AND SIMOX

摘要

High temperature pressure sensor with double SOI structure by SDB and SIMOX has been developed. The first SOI layer was made by SIMOX technology and employed as the etch-stop layer in TMAH solution. Followed by 5μm epitaxial growth, which determinated the final diaphragm thickness, and 800nm thermal oxidation, which was used as a dielectrically isolation. The first SOI wafer was bonded on a highly boron doped silicon layer to form the second SOI structure. After the complete silicon pressure sensor was fabricated , high temperature measurement up to 350℃ has been performed.