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150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

机译:150 nm×200 nm交叉点六角形氮化硼基忆阻器,具有高阻态的超低电流

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摘要

Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.
机译:在这里,我们展示了使用多层六方氮化硼(h-BN)作为开关层的小尺寸交叉点忆阻器的制造。演示了出色的双极性电阻开关(RS),电流开/关比> 1000,并且可变性低。这些器件还可以在阈值RS模式下工作,高阻态(HRS)电流是有史以来最低的(10fA @ 0.1V),从而有可能用作选择器。

著录项

  • 来源
  • 会议地点 Singapore(SG)
  • 作者单位

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

    Materials Science Engineering Department, Technion – Israel Institute of Technology, Haifa, 32000, Israel;

    National Scientific and Technical Research Council (CONICET), UTN-CNEA, Godoy Cruz 2290, Buenos Aires, Argentina;

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

    Materials Science Engineering Department, Technion – Israel Institute of Technology, Haifa, 32000, Israel;

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

    Institute of Functional Nano Soft Materials, Soochow University, Suzhou, 215123, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Memristors; Scanning electron microscopy; Electrodes; Switches; Two dimensional displays; Fabrication;

    机译:忆阻器;扫描电镜;电极;开关;二维显示器;制造;;

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