Molecular Dynamics Simulation of Grain Growth of Cu Film

摘要

We investigated the growth process of Cu polycrystalline films on three substrates Si, Ti and Ru during isothermal annealing by the molecular dynamics method. We focused on the influence of the adhesion strength and size mismatch between substrate and Cu on crystallinity and orientational order of the film. The present simulation clarified that Ru is excellent material as substare/barrier metal for Cu wire. Based on the findings, a search plot for replacement material of Ru was proposed.