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首页> 外文期刊>Materials transactions >Molecular Dynamics Simulation of Grain Growth of Cu Film—Effects of Adhesion Strength between Substrate and Cu Atoms—
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Molecular Dynamics Simulation of Grain Growth of Cu Film—Effects of Adhesion Strength between Substrate and Cu Atoms—

机译:Cu膜晶粒长大的分子动力学模拟—基体与Cu原子间附着力的影响

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摘要

The growth process of Cu polycrystal films on Si, Ti, W and Ru substrate during isothermal annealing was studied by the molecular dynamics method. We focused on the influence of the adhesion strength between substrate and Cu on crystallinity and orientational order of the film. After structural relaxation at low temperature (50 K), the movements of individual Cu atoms were calculated for different annealing temperatures using the molecular dynamics method. The crystallinity and orientational order of the film were examined by 2D-Fourier transformation of the atomic structure. We found that the system with strong adhesion strength between substrate and Cu showed higher crystallinity and orientational order for (111) oriented Cu film.
机译:利用分子动力学方法研究了等温退火条件下Si,Ti,W和Ru衬底上Cu多晶膜的生长过程。我们着重研究了基材与铜之间的粘合强度对薄膜的结晶度和取向顺序的影响。在低温(50 K)下结构弛豫后,使用分子动力学方法计算了不同退火温度下单个Cu原子的运动。通过原子结构的二维傅立叶变换检查了膜的结晶度和取向顺序。我们发现具有较强的衬底和铜之间的粘附强度的系统显示(111)取向的铜膜更高的结晶度和取向顺序。

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