CHANGES IN THE PARAMETERS OF SILICON-ON-INSULATOR STRUCTURES UNDER IRRADIATION

摘要

Radiation-induced changes in the parameters of silicon-on-insulator (SOI) structures fabricated by wafer bonding and hydrogen slicing have been investigated. The SOI structures had different types of conductivity and doping levels of their top silicon layer and the substrate; they also ranged in buried-oxide thickness. In the experiments, γ- either electron irradiation was used. The electric field (E ≥ 5x10~3 V/cm) in the buried oxide due to the contact potential between the top silicon layer and the substrate was found to cause effective separation of ionization-induced charge carriers and preferential accumulation of positive charge near one of the interfaces dependently on the field sign. The density of traps generated in the buried oxide near the Si/SiO_2 interface prepared by thermal oxidation is higher than near the bonded interface.