FORMATION MECHANISM OF LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM

摘要

The local thickness profile of a silicon epitaxial film formed using the horizontal cold wall single-wafer epitaxial reactor in a trichlorosi lane-hydrogen system at atmospheric pressure is evaluated using numerical calculations based on the transport and epitaxy model, taking into account the details of the entire gas inlet geometry. The characteristic valley-like thickness profile is shown to appear due to the non-uniform temperature and velocity distribution above the silicon substrate formed by the gas inlet consisting of inlet plates, a stair and three adjustable inlet sections. The thickness profile of the silicon epitaxial film is considered to be sensitive to the gas inlet geometry.