STRUCTURE AND THERMAL EVOLUTION OF SMALL CLUSTERS FOUND AFTER ULTRA LOW ENERGY HIGH DOSE BORON IMPLANTATION IN Si

摘要

In this paper we report on the structure and the thermal behavior of specific defects which are found only after annealing of highly B and Si supersaturated silicon crystals. These {100} defects definitely differ from already reported pure Si interstitial defects and probably result from the co-precipitation of B and Si. Systematically found after moderate annealing of high-dose ultra-low energy B implants, they might account for a part of the immobile, inactive, fraction of the implanted boron.