Photoelectrochemistry and Etching of SiC: a Comparison with Si

摘要

The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both K.OH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.