Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN- Based LEDS

机译：激光源对基于激光剥离的GaN基LEDS的反向偏置泄漏的影响

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The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.

机译：使用KrF脉冲准分子激光器（248 nm）和三倍频Nd YAG激光器（355nm）将GaN薄膜与蓝宝石衬底分离。研究了这两个激光源对InGaN-GaN发光二极管（LED）的反向偏置泄漏的影响。

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来源
《Electrochemical Society(ECS) Meeting;State-of-the-Art Program on Compound Semiconductors;SOTAPOCS;International Symposium on Process at the Semiconductor-Solution Interface; 20070506-10;20070506-10;20070506-10;20070506-10; Chicago,IL(US);Chicago,IL(US);C》|2007年|P.285287|共2页
会议地点 ChicagoIL(US);ChicagoIL(US);ChicagoIL(US);ChicagoIL(US)
作者
Ji-Hao Cheng; Wei Chih Peng; YewChung Sermon Wu; Hao Ouyang;
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Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;

Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan, R.O.C;

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1. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes [J] . Yewchung Sermon Wu, Ji-Hao Cheng, Wei Chin Peng, Applied Physics Letters . 2007,第25期

机译：激光源对激光剥离GaN基发光二极管反向偏置泄漏的影响
2. Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes [J] . Yongjian Sun, Tongjun Yu, Huabo Zhao, Journal of Applied Physics . 2009,第1期

机译：激光剥离GaN基发光二极管中反向偏置泄漏电流增加的微观分析
3. GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates [J] . Yongjian Sun, Simeon Trieu, Tongjun Yu, Semiconductor science and technology . 2011,第8期

机译：通过改进的YAG激光剥离技术和带图案的蓝宝石衬底制造的具有高光提取复合表面结构的GaN基LED
4. Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN- Based LEDS [C] . Ji-Hao Cheng, Wei Chih Peng, YewChung Sermon Wu, Electrochemical Society Meeting . 2007

机译：激光源对激光剥离GAN LED反向偏置泄漏的影响
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Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN- Based LEDS

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