AlGaInP LIGHT-EMITTING DIODES WITH METAL SUBSTRATE FABRICATED BY WAFER BONDING

摘要

AlGaInP LED with copper substrate has been successfully fabricated by the wafer bonding technique in this study. It was found that bonded AlGaInP LED devices could be operated in a higher injection forward current above 500mA. Such bonding enhanced the device performance significantly. The joule heating exhibiting in conventional LEDs was eliminated because the copper substrate provided a good heat sink. Thus, the thermal degradation of the conventional LEDs was improved.