首页> 外文会议>Electronic Components Technology Conference, 1998. 48th IEEE >Creep behavior of a flip-chip package by both FEM modeling and real time moire interferometry
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Creep behavior of a flip-chip package by both FEM modeling and real time moire interferometry

机译:通过FEM建模和实时莫尔干涉仪进行倒装芯片封装的蠕变行为

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In this paper, the creep behavior of a flip-chip package under a thermal load was investigated by using nonlinear finite element technique coupled with high density laser moire interferometry. The real-time moire interferometry technique was used to monitor and measure the time-dependent deformation of flip-chip packages during the test, while the finite element method was adapted to analyze the variation of stresses at edges and corners of interfaces with time by considering the viscoelastic properties of the underfill and the viscoplastic behavior of the solder balls. The results show that the creep behavior of the underfill and the solder balls does not have significant effect on the warpage of the flip-chip under the considered thermal load due to their constrained small volume. The variation of the time-dependent deformation in the flip-chip package caused by the creep behavior of the underfill and the solder balls is in the submicron scale. The maximum steady state U-displacement is only reduced by up to 6.7% compared with the maximum initial state U-displacement. Likewise, the maximum steady state V-displacement is merely reduced by up to 10% compared with the maximum initial state V-displacement. The creep behavior slightly weakens the warpage situation of the flip-chip package. However, the modeling results show that the localized stresses at corners and edges of interfaces greatly decrease due to the consideration of viscoelastic properties of the underfill and the viscoplastic properties of the solder balls and thereby effectively prevents interfaces from cracking. In addition, the predicted deformation values of the flip-chip package obtained from the finite element analysis were compared with the test data obtained from the laser moire interferometry technique. It is shown that the deformation values of the flip-chip package predicted from the finite element analysis are in a fair agreement with those obtained from the test.
机译:本文利用非线性有限元技术结合高密度激光莫尔干涉仪研究了倒装芯片封装在热载荷下的蠕变行为。测试中使用实时莫尔干涉技术来监测和测量倒装芯片封装随时间变化的变形,而有限元方法则通过考虑时间的变化来分析界面边缘和角落的应力随时间的变化。底部填充材料的粘弹性和焊球的粘塑性行为。结果表明,在考虑了热负荷的情况下,由于底部填充物和焊球的体积小,其蠕变行为对倒装芯片的翘曲没有显着影响。由底部填充和焊球的蠕变行为引起的倒装芯片封装中随时间变化的变形在亚微米级别。与最大初始状态U位移相比,最大稳态U位移最多只能减少6.7%。同样,与最大初始状态V位移相比,最大稳态V位移仅减少了10%。蠕变行为会稍微削弱倒装芯片封装的翘曲状态。然而,建模结果表明,由于考虑了底部填充的粘弹性和焊球的粘塑性,界面的拐角和边缘处的局部应力大大降低,从而有效地防止了界面开裂。此外,将通过有限元分析获得的倒装芯片封装的预测变形值与通过激光莫尔干涉测量技术获得的测试数据进行了比较。结果表明,由有限元分析预测的倒装芯片封装的变形值与从测试中获得的变形值完全一致。

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