Characterizations of a GaInNAs double-barrier quantum-well infrared photo-detector with the near-infrared photo-detection

机译：GaInNAs双壁垒量子阱红外光电探测器与近红外光电探测器的表征

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A novel GalnNAs/AlAs/AlGaAs double-barrier quantum-well-infrared-photo-detector was characterized by photoluminescence, x-ray diffraction, photoluminescence excitation, photocurrent spectra and dark current measurements. The photoluminescence peak at ~1.2

机译：通过光致发光，x射线衍射，光致发光激发，光电流谱和暗电流测量，对新型GalnNAs / AlAs / AlGaAs双能垒量子阱红外光电探测器进行了表征。在〜1.2处的光致发光峰

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《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.193-196|共4页
会议地点 TainanTaiwan
作者
Ma; B.S.; Fan; W.J.; Dang; Y.X.; Cheah; W.K.; Loke; W.K.; Liu; W.; Sentosa; D.; Liu; Y.W.; Lew; K.L.; Wang; H.; Yoon; S.F.; Zhang; D.H.;
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X-ray diffraction; aluminium compounds; annealing; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photoconductivity; photodetectors; photoluminescence; quantum well devices; semiconductor quantum wells; spectral line shi;

机译：X射线衍射;铝化合物退火;暗电导率砷化镓镓化合物铟化合物红外探测器光电导性光电探测器光致发光量子阱设备；半导体量子阱；谱线;

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1. Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect [J] . E. Luna, A. Trampert, A. Guzman, Journal of Applied Physics . 2005,第4期

机译：双势垒量子阱红外光电探测器的性能与其微观结构之间的相关性：光电效应的起源
2. TRANSPORT MECHANISM OF GAMMA- AND X-BAND ELECTRONS IN ALXGA1-XAS/ALAS/GAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED PHOTODETECTORS [J] . Osotchan T., Tansley TL., Chin VWL. Physical Review, B. Condensed Matter . 1996,第3期

机译：GAX和XLAS / ALAS / GAAS双壁垒量子阱红外光电探测器中伽马和X带电子的传输机理
3. Side-chain engineering of conjugated polymers toward highly efficient near-infrared organic photo-detectors via morphology and dark current management (vol 8, pg 7765, 2020) [J] . Kang Yeongkwon, Eun Hyeong Ju, Kye Hyojin, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2020,第28期

机译：通过形态和暗电流管理（Vol 8，PG 7765,2020），共轭聚合物对高效近红外有机光电探测器的侧链工程（Vol 8，PG 7765,2020）
4. Characterizations of a GaInNAs double-barrier quantum-well infrared photo-detector with the near-infrared photo-detection [C] . B. S. Ma, W. J. Fan, Y. X. Dang, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

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5. A Near-Infrared Survey: Local Large-Scale Structure and The Near-Infrared Background. [D] . Keenan, Ryan C. 2011

机译：近红外测量：局部大型结构和近红外背景。
6. Data for direct chemical deposition of PbS on chemical vapor deposition grown-graphene for high performance photovoltaic infrared photo-detectors [O] . Emmanuel K Ampadu, Jungdong Kim, Eunsoon Oh, 2020

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7. Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy [O] . Sun H.D., Clark A.H., Calvez S., 2005

机译：金属有机气相外延生长的1.3μmGaInNAs量子阱结构的光谱表征

Characterizations of a GaInNAs double-barrier quantum-well infrared photo-detector with the near-infrared photo-detection

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