Preparation of Textured PZT/LaNiO_3 Films on LaAIO_3 Substrates by Sol-Gel Process

摘要

Using La(NO_3)_3·nH_2O and Ni(CH_3COO)_2·4H_2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO_3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO_3 (LAO) substrates. Using Pb(CH_3COO)_2·3H_2O, La(NO_3)_3·nH_2O, Ti(OC_4H_9)_4, Zr(OC_4H_9)_4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7μC/cm～2, superior to the PZT film with random orientation and a remanent polarization of 18.4μC/cm～2 prepared on ITO/quartz substrate.