Department of Electrical Eng. El., University of Liverpool, Liverpool L69 3GJ, UK;
Department of Physics, University of Liverpool, Liverpool L69 7ZD, UK;
Department of Electrical Eng. El., University of Liverpool, Liverpool L69 3GJ, UK;
Department of Electrical Eng. El., University of Liverpool, Liverpool L69 3GJ, UK;
Department of Electrical Eng. El., University of Liverpool, Liverpool L69 3GJ, UK;
Department of Physics, University of Liverpool, Liverpool L69 7ZD, UK;
School of Engineering, University of Liverpool, Liverpool L69 3GH, UK;
School of Engineering, University of Liverpool, Liverpool L69 3GH, UK;
MBE Laboratory, Inst. of Materials Science, NCSR Demokritos, 153 10 Athens, Greece;
MBE Laboratory, Inst. of Materials Science, NCSR Demokritos, 153 10 Athens, Greece;
KTH Royal Inst. of Technology, School of ICT, Elect. 229, SE-164 40 Kista, Sweden;
KTH Royal Inst. of Technology, School of ICT, Elect. 229, SE-164 40 Kista, Sweden;
KTH Royal Inst. of Technology, School of ICT, Elect. 229, SE-164 40 Kista, Sweden;
KTH Royal Inst. of Technology, School of ICT, Elect. 229, SE-164 40 Kista, Sweden;
机译:金属电极与GeO2电介质之间的界面工程,用于未来的基于Ge的金属氧化物半导体技术
机译:金属电极与GeO_2电介质之间的界面工程,用于未来的基于Ge的金属氧化物半导体技术
机译:锗基纳米电子器件界面工程中的氟化石墨烯
机译:基于CMOS GE技术的界面工程路线
机译:适用于未来规模化技术的高介电常数电介质和高迁移率半导体:氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
机译:使用噬菌体和核糖体展示技术的抗体VH和VL重组揭示了与VH-VL接口残基改善亲和力的独特结构途径从而提供了重要的结构多样性
机译:(受邀)未来的基于CMOS Ge的技术的接口工程路线
机译:低噪声,低功耗传感器接口电路,用于标准CmOs技术的光谱分析,工作频率为4K