Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon-

摘要

In this paper, we report our approaches in realizing high-k/Si interface without SiOx based interfacial layer by introducing Lanthanum silicates as interfacial layer at the interface of high-k dielectric and Si substrate. We also demonstrated the usefulness of 'Direct Contact' of high-k with Si through a lanthanum silicate interlayer in the scaling of EOT beyond 0.5nm.