Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy

摘要

Abstract: We propose a method for the monitoring of the glass transition temperature of the resist used in semiconductor lithography based on the broad-band Nuclear Magnetic Resonance technique. The method is capable to trace the evolution of the mobility of several major chemical species present in a resist system versus processing parameters, e.g. exposure energy and bake temperature. The most important components, namely the lower molecular weight photoactive compound and the higher molecular weight base resin, were characterized, in accordance with their signals, as mobile and the rigid component, respectively. The method has the potential for being used for process optimization and for on-line monitoring. !5