Abstract: Indium tin oxide (ITO) films have been deposited onto glass substrates by rf magnetron sputtering without in-situ substrate heating. The as-deposited films have an electrical resistivity of approximately 5 $MUL 10$+$MIN@4$/ approximately ega@-cm, visible transmittance of about 85%, and IR reflectance of above 80% at 5 $mu@m. The effect of sputtering parameters on the deposition rate and the electrical and optical properties of ITO films are investigated. Loss of transmittance or blackening for ITO films prepared at high sputtering power are observed and explored.!24
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