Localization concept of re-decomposition area to fix hotspots for LELE process

摘要

Among several double patterning methods, Litho-Etch-Litho-Etch type DPT is known to have an advantage of layout flexibility. There are two problems when a hotspot, which is not fixable by tuning OPC, is detected on a wafer or during lithography compliance verification. One is to redo decomposition, OPC and verification is quite time consuming. The other is a risk to introduce a new hotspot at different locations. In this report, a new method to fix hotspot with layout modification of limited area will be presented. The proposed method can reduce not only repair turnaround time but also a risk of new hotspot generation.