Structural and electronic properties of pulsed laser beam mixed Ni/GaAs

摘要

The effect of pulsed laser beam mixing on the structural and electrical characteristics of Ni/GaAs Schottky barrier diodes has been investigated. Raman measurements revealed the presence of a disorder activated TO mode. An increase of the I_(TO)/I_(LO) ratio of the GaAs Raman signals could be correlated to the occurrence of a high resistive ohmic conductivity. Photoluminescence measurements did not yield evidence for the presence of deep Ni-acceptor states in the GaAs surface layers.