Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

摘要

By means of nanosecond laser pulses at 355, 532, and 1064 nm, p(Zn)-type GaAs was ablated and deposited on n-type Si. The samples showed rectification and Hall measurements established that the deposited material was p-type, but the active-doping concentration was six orders of magnitude below the target value. Because secondary-ion mass spectroscopy results indicated stoichiometric material transfer, we concluded that most of the Zn atoms do not act as acceptors because of the amorphous film texture. The work further showed indications that pulsed-laser deposition at 355 nm causes enhanced Si diffusion into the deposited film, compared to the ablations done at 532 and 1064 nm.