Scanning tunneling induced luminescence studies of GaAs(100) surfaces after different surface treatments

机译：不同表面处理后GaAs（100）表面的扫描隧道致发光研究

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We demonstrate the suitability of scanning tunneling induced luminescence (STIL) measurements for studying the influence of plasma induced surface damage on GaAs (100) surfaces with resolution in the nanometer range. The STIL experiments are compared with results obtained from C/V and I/V measurements at different etch depths which give information about the concentration and depth of crystal defects.

机译：我们证明了扫描隧道诱导发光（STIL）测量的适用性，用于研究等离子体诱导的表面损伤对GaAs（100）表面的影响，分辨率在纳米范围内。将STIL实验与在不同蚀刻深度下从C / V和I / V测量获得的结果进行比较，从而得出有关晶体缺陷浓度和深度的信息。

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《Defect recognition and image processing in semiconductors and devices》|1993年|73-76|共4页
会议地点 Santander(ES);Santander(ES)
作者
J Horn; M Stehle; M Bischoff; H Pagnia; H L Hartnagel;
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Institute for Microwave Electronics, TH Darmstadt, Merckstr. 25,64283 Darmstadt, Germany;

Institute of Applied Physics, TH Darmstadt, Schlossgartenstr. 7,64289 Darmstadt, Germany;

Institute of Applied Physics, TH Darmstadt, Schlossgartenstr. 7,64289 Darmstadt, Germany;

Institute of Applied Physics, TH Darmstadt, Schlossgartenstr. 7,64289 Darmstadt, Germany;

Institute for Microwave Electronics, TH Darmstadt, Merckstr. 25,64283 Darmstadt, Germany;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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专利

1. Ab initio and scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8 × 2) structure [J] . J. J. K. Lang, M. P. J. Punkkinen, P. Laukkanen, Physical review . 2010,第24期

机译：铟终止的GaAs（100）表面的从头算和扫描隧道显微镜研究：c（8×2）结构中铟诱导的表面重建变化
2. Bismuth-stabilized (2 ×1) And (2 × 4) Reconstructions On Gaas(100) Surfaces: Combined First-principles, Photoemission, And Scanning Tunneling Microscopy Study [J] . M.P.J. Punkkinen, P. Laukkanen, H.-P. Komsa, Physical review . 2008,第19期

机译：Gaas（100）表面上铋稳定的（2×1）和（2×4）重建：结合的第一原理，光发射和扫描隧道显微镜研究
3. Electronic and structural properties of GaAs(100)(2X4) and InAs(100)(2X4) surfaces studied by core-level photoemission and scanning tunneling microscopy [J] . P. Laukkanen, M. Kuzmin, R. E. Peraelae, Physical review. B, Condensed Matter And Materials Physics . 2005,第4期

机译：GaAs（100）（2X4）和InAs（100）（2X4）表面的电子和结构性质，通过核心级光发射和扫描隧道显微镜研究
4. Scanning tunneling induced luminescence studies of GaAs(100) surfaces after different surface treatments [C] . International conference on Defect recognition and image processing in semiconductors and devices . 1994

机译：扫描不同表面处理后GaAs（100）表面的隧道诱导的发光研究
5. A scanning tunneling microscopy and density functional theory study of halogen dynamics and etching reaction on the silicon(100) surfaces. [D] . Chen, Dongxue. 2003

机译：扫描隧道显微镜和密度泛函理论研究卤素在硅（100）表面的动力学和蚀刻反应。
6. Scanned Probe Oxidation onp-GaAs(100) Surface with an Atomic Force Microscopy [O] . Sheng-Rui Jian, Jenh-Yih Juang 2008

机译：原子力显微镜在p-GaAs（100）表面扫描探针氧化
7. Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface [O] . Moriarty P, Murphy B, Roberts L, 1994

机译：硫处理的GaAs（100）表面的光电子核能级光谱和扫描隧道显微镜研究

Scanning tunneling induced luminescence studies of GaAs(100) surfaces after different surface treatments

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