Minority carrier diffusion length mapping of extended crystallographic defects in semiconductor silicon

摘要

A new instrument based on the light beam induced current (LBIC) technique for the determination of the local minority carrier diffusion length L in silicon samples is presented. The evaluation of L is done by measuring the spectral variation of the normalized photocurrent as collected by a diode structure under the local excitation by a light spot for a wavelength λ in the near infrared range.