A study of channeling and induced damage in boron implanted silicon

摘要

Implanted atoms profiles and the induced damage in boron implanted silicon under different implantation conditions were measured by using capacitance techniques. Our results show that when Rapid Thermal Annealing (RTA) processes are used shallower junctions can be obtained but some deep level damage is induced. As for the incidence angle, the junctions obtained are deeper and the damage is lower for the maximum channeling cases. And finally, with respect to the ion energy, we have observed that the higher the energy was, the deeper the implantation and damage profiles were obtained.