Influence of structural defects in Silicon single crystals on the electrical parameters of diffusion photodiodes

摘要

The investigation of the influence of as-grown and technological defects in the parameters of diffusion photo diodes based on Cz-Silicon single crystals was carried out. The various techniques of x-ray diffraction topography were used. It was found that there is good correlation between high values of leakage current and dislocation bundles penetrated into diffusion layer.