Microscopic correspondence between Schottky-barrier height and interface morphology at thermally degraded Al/(111)Si contacts

摘要

We have measured microscopic distribution of Schottky barrier heights (SBHs) at epitaxial-Al-Si(111) interfaces by using scanning internal-photoemission microscopy. The SBH distribution at the interface was homogeneous in the as-deposited state. After annealing, the inhomogeneity of SBH arose and it caused the discrepancy between two SBHs determined by I-V and C-V methods. The thickness distribution of recrystallized p~+-Si layer, formed during annealing process, was responsible for the distribution of SBH.