Surface Photovoltage and Contact Potential Difference Imaging of Defects Induced by Plasma Processing of IC Devices

摘要

Contact Potential Difference and Surface Photovoltage have been employed to investigate materials defects introduced by plasma processing during the manufacturing of IC devices. Employed analytical techniques facilitated detection of defects formed by different interactions between the Si wafer and plasma environment offering a comprehensive picture of plasma induced damage. Correlation between the materials defects introduced by plasma processing and degradation of electrical devices indicate that the proposed techniques could be used for plasma damage monitoring in the IC processing.