Fine structure observed in the thermal emission process for defects in semiconductors

摘要

High-resolution Laplace-transform DLTS technique has been used to study the influence of small disturbances on the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the iron-boron pair in the p-type silicon, two different configurations of the defect have been observed: stable and metastable. For both of them the influence of the magnetic field on the hole emission is demonstrated and a possible microscopic structure of the metastable defect configuration is discussed. Due to the resolution of the method it was also possible to demonstrate a complex character of the electron emission for two charge states of thermal donors in the n-type silicon and observe the influence of the magnetic field on the process.