Scanning internal-photoemission microscopy: an imaging technique to reveal microscopic inhomogeneity at metal- semiconductor interfaces

摘要

We have developed scanning internal-photoemission microscopy (SIPM) which is capable of imaging Schottky-barrier distribution at "buried" metal-semiconductor interfaces. By using this technique, inhomogeneous reaction at annealed interfaces of Ti/Pt/Au/GaAs and epitaxial-Al/Si(111) systems has been studied in relation to their microscopic as well as macroscopic electrical properties.