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Evaluation of an Advanced Process Control Solution to detect Wafer Positioning Issues within the Hot and Cold Plate Modules of a Lithography Track

机译:评估先进工艺控制解决方案以检测光刻路线的热板和冷板模块中的晶圆定位问题

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To run the various steps of the process, multiple robot arm transfers within the Hot and Cold Plate modules which directly influence the critical dimension of the production wafers were performed on the lithography track. Wafer positioning inside these modules was found to be one of the key parameters to obtain the best critical dimensional uniformity across the wafer. With the currently realized track monitoring and conventional Statistical Process Control (SPC), potential process drifts or errors within these modules can only be detected from wafers measured during the post process control of product parameters. To catch all potential non-conformal production wafers directly at the tool, minimize equipment downtime and identify the root cause of maintenance issues, the real-time control of tool and process parameters is required. This paper presents the results of the evaluation of an Advanced Process Control (APC) solution used to detect in realtime mode any wafer positioning issues within the Hot and Cold Plate modules of a lithography track based on the monitoring of the plate temperature profile during wafer processing. After an explanation of the methodology used to collect the data from the tool, an initial phase of analysis of the temperature profile of the different Hot Plate modules was carried out. The monitoring of the temperature range was identified as the key parameter for the detection of wafer positioning issues where the temperature profile depends on the number of resistive heating elements, temperature settings and process conditions of the Hot Plate. The wafer tilt was simulated to compare the temperature profile to standard process conditions and in turn determine the detection capability. For the Cold Plate module, it was necessary to know the time between the end of the hot step and the start of the following cold step in order to detect a real tilt issue.
机译:为了运行该过程的各个步骤,在光刻轨道上执行了直接影响生产晶片的临界尺寸的热板和冷板模块内的多个机械手转移。发现将晶片定位在这些模块内是获得整个晶片上最佳临界尺寸均匀性的关键参数之一。利用当前实现的跟踪监控和常规的统计过程控制(SPC),这些模块中潜在的过程漂移或错误只能从产品参数的后处理控制期间测量的晶圆中检测出来。为了直接在工具上捕获所有潜在的不合格生产晶圆,最大程度地减少设备停机时间并确定维护问题的根本原因,需要对工具和工艺参数进行实时控制。本文介绍了先进工艺控制(APC)解决方案的评估结果,该解决方案用于基于对晶片处理过程中板温度曲线的监控,实时检测光刻轨道的热板和冷板模块内的任何晶片定位问题。在解释了用于从工具中收集数据的方法之后,进行了不同热板模块温度曲线分析的初始阶段。温度范围的监控被确定为检测晶圆定位问题的关键参数,其中温度曲线取决于电阻加热元件的数量,热板的温度设置和工艺条件。模拟晶片倾斜度,以将温度曲线与标准工艺条件进行比较,进而确定检测能力。对于冷板模块,有必要知道热步骤结束与下一个冷步骤开始之间的时间,以检测实际的倾斜问题。

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