AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO_4 laser

摘要

We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO_4 1.06-μm laser under room-temperature operation. The gain medium is an AlGalnAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.