InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

摘要

We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.