New Type of Silicon Photoelectronic Negative Resistance Devices-- PDUBAT

摘要

Photoelectronic DUal Base Transistor (PDUBAT) is a novel kind of photoelectronic negative resistance devices, which features 'N' type negative resistance and small negative resistance |R_N|. PDUBAT consists of a vertical NPN bipolar transistor and a P type diffusion region with large area over a specific distance. The base and collector of the vertical NPN BIT with a large P diffusion region form a lateral PNP BJT. The emitter and collector of the vertical NPN BJT are connected to the ground and voltage supply respectively, while the P diffusion region is left floated to detect input light signal. When the device is exposed to light, a large number of electron-hole pairs are generated at the PN junction under the P diffusion region. The holes travel along the base of the lateral PNP BJT and become the driving current of the vertical NPN BJT. In experiments, we found that PDUBAT acts as a pulse oscillator without the load of inductors, whose frequency and magnitude are modulated by the intensity of incident light. The oscillating frequency increases while the magnitude decreases with the increasing of light intensity. The manufacturing process of PDUBAT is compatible with that of BJTs, so that it can be incorporated with the ICs.