首页> 外国专利> NEGATIVE RESISTANCE TYPE BISTABLE CIRCUIT AND CONTROLLING METHOD FOR SAID NEGATIVE RESISTANCE

NEGATIVE RESISTANCE TYPE BISTABLE CIRCUIT AND CONTROLLING METHOD FOR SAID NEGATIVE RESISTANCE

机译:所述负电阻的双稳态双稳态电路及控制方法

摘要

PURPOSE: To obtain the negative resistance type bistable circuit suitable for being manufactured as a monolithic element on a silicon semiconductor substrate. ;CONSTITUTION: The circuit consists of a PNP bipolar transistor(TR) Tr1 and a P-channel MOS field effect TR (MOSFET) Tr2 and is provided with a control input terminal B, a control output terminal C and a common terminal E for control input and control output. A region of a negative resistance caused between the control output terminal C and the common terminal E and its value are changed by changing a current IB to the control input terminal B.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:获得负电阻型双稳态电路,适合于在硅半导体衬底上作为单片元件制造。 ;组成:该电路由一个PNP双极晶体管T r1 和一个P沟道MOS场效应TR(MOSFET)T r2 组成,并带有一个控制输入端子B,控制输出端子C和用于控制输入和控制输出的公共端子E。通过改变流向控制输入端子B的电流IB来改变在控制输出端子C和公共端子E之间引起的负电阻区域及其值。COPYRIGHT:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05129899A

    专利类型

  • 公开/公告日1993-05-25

    原文格式PDF

  • 申请/专利权人 KAWASAKI STEEL CORP;

    申请/专利号JP19910290172

  • 发明设计人 NAKAYAMA OSAMU;

    申请日1991-11-06

  • 分类号H03K3/36;

  • 国家 JP

  • 入库时间 2022-08-22 05:15:03

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